Bing-yue Tsui: шукати на сайті Z-Library

Tsui, Bing-Yue, Cheng, Jung-Chien, Yen, Cheng-Tyng, Lee, Chawn-Ying

Рік:

2000

Мова:

english

Файл:

PDF, 476 KB

english, 2000

Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC

Журнал:

Bing-Yue Tsui, Tsung-Ju Yang, Tzu-Kun Ku

Рік:

2017

Мова:

english

Файл:

PDF, 2.05 MB

english, 2017

Impact of interface nature on deep sub-micron Al-plug resistance

Журнал:

Bing-Yue Tsui,, Shyue-Shyh Lin,, Chia-Shone Tsai,, Hsia, C.C.

Рік:

2001

Мова:

english

Файл:

PDF, 872 KB

english, 2001

[American Vacuum Soc 1999 4th International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA (9-11 May 1999)] 1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) - Plasma damage during dielectric etch in high density plasma etcher

Рік:

1999

Мова:

english

Файл:

PDF, 221 KB

english, 1999

[IEEE IC's - Kitakyushu, Japan (2004.05.27-2004.05.27)] Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's - Trench gate power MOSFETs with retrograde body profile

Bing-Yue Tsui,, Ming-Da Wu,, Tian-Choy Gan,, Hui-Hua Chou,, Zhi-Liang Wu,, Ching-Tzong Sune,

Рік:

2004

Мова:

english

Файл:

PDF, 209 KB

english, 2004

Schottky barrier diodes isolated by local oxidation of SiC (LOCOSiC) using pre-amorphization implantation technology

Cheng, Jung-Chien, Lee, Jia-En, Tsui, Bing-Yue

Журнал:

Tseng, Yuan-Hung, Tsui, Bing-Yue

Рік:

2020

Файл:

PDF, 1.77 MB

2020

Microtrenching-free two-step reactive ion etching of 4H-SiC using NF3/HBr/O2 and Cl2/O2

Журнал:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Рік:

2014

Мова:

english

Файл:

PDF, 2.60 MB

english, 2014

[IEEE 1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] - Taipei, Taiwan (March 6-7, 1993)] 1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] - Recessed Metal/Silicon Contact Resistance Measured by the Cross-Bridge-Kelvin Resistor Structure - Numerical Analysis

Bing-Yue Tsui,, Mao-Chieh Chen,

Рік:

1993

Мова:

english

Файл:

PDF, 156 KB

english, 1993

[IEEE IC's - Kitakyushu, Japan (2004.05.27-2004.05.27)] Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's - A novel fully self-aligned process for high cell density trench gate power MOSFETs

Bing-Yue Tsui,, Tian-Choy Gan,, Ming-Da Wu,, Hui-Hua Chou,, Zhi-Liang Wu,, Ching-Tzong Sune,

Рік:

2004

Мова:

english

Файл:

PDF, 234 KB

english, 2004

Contact resistivity of shallow junctions formed by implantation through Pt or PtSi

Bing-Yue Tsui, Mao-Chieh Chen

Журнал:

Рік:

1992

Мова:

english

Файл:

PDF, 566 KB

english, 1992

Multi-gate non-volatile memories with nanowires as charge storage material

Bing-Yue Tsui, Pei-Yu Wang, Ting-Yeh Chen, Jung-Chien Cheng

Журнал:

Рік:

2010

Мова:

english

Файл:

PDF, 368 KB

english, 2010

A process for high yield and high performance carbon nanotube field effect transistors

Tseng-Chin Lee, Bing-Yue Tsui, Pei-Jer Tzeng, Ching-Chiun Wang, Ming-Jinn Tsai

Журнал:

Bing-Yue Tsui, Mao-Chien Chen

Рік:

2010

Мова:

english

Файл:

PDF, 462 KB

english, 2010

Series resistance of self-aligned silicided source/drain structure

Журнал:

Bing-Yue Tsui, Lin, C.-P.

Рік:

1993

Мова:

english

Файл:

PDF, 1.03 MB

english, 1993

Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETs

Журнал:

Chiu, Wei-Chih, Tsui, Bing-Yue

Рік:

2005

Мова:

english

Файл:

PDF, 1.46 MB

english, 2005

Characteristics of size dependent conductivity of the CNT-interconnects formed by low temperature process

Журнал:

Chiu, Wei-Chih, Tsui, Bing-Yue

Рік:

2013

Мова:

english

Файл:

PDF, 1018 KB

english, 2013

High performance of CNT-interconnects by the multi-layer structure

Журнал:

Tsui, Bing-Yue, Su, Ting-Ting, Shew, Bor-Yuan, Huang, Yang-Tung

Рік:

2014

Мова:

english

Файл:

PDF, 1.91 MB

english, 2014

Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric

Журнал:

Bing-Yue Tsui,, Chih-Feng Huang,

Рік:

2013

Мова:

english

Файл:

PDF, 912 KB

english, 2013

[IEEE 2007 IEEE Conference on Electron Devices and Solid-State Circuits - Tainan, Taiwan (2007.12.20-2007.12.22)] 2007 IEEE Conference on Electron Devices and Solid-State Circuits - The Impact of High-voltage Drift N-well and Shallow Trench Isolation Layouts on Electrical Characteristics of LDMOSFETs

Huang, C. T., Tsui, Bing-Yue, Liu, Hsu-Ju, Lin, Geeng-Lih

Рік:

2007

Мова:

english

Файл:

PDF, 4.24 MB

english, 2007

Wide range work function modulation of binary alloys for MOSFET application

Журнал:

Tseng, Hsuan-Tzu, Tsui, Bing-Yue

Рік:

2003

Мова:

english

Файл:

PDF, 308 KB

english, 2003

[IEEE 2012 IEEE International Interconnect Technology Conference - IITC - San Jose, CA, USA (2012.06.4-2012.06.6)] 2012 IEEE International Interconnect Technology Conference - A new procedure to extract ultra-low specific contact resistivity

Рік:

2012

Мова:

english

Файл:

PDF, 316 KB

english, 2012

[IEEE Proceedings of the IEEE 2001 International Interconnect Technology Conference - Burlingame, CA, USA (2001.06.6-2001.06.6)] Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461) - Electrical reliability of low dielectric constant diffusion barrier (a-SiC:H) for copper interconnect

Kuo-Lung Fang,, Bing-Yue Tsui,, Cheng-Chi Yang,, Shyh-Dar Lee,

Рік:

2001

Мова:

english

Файл:

PDF, 273 KB

english, 2001

Electrical Stability and Reliability of Ultralow Dielectric Constant Porous Carbon-Doped Oxide film for Copper Interconnect

Fang, Kuo-Lung, Tsui, Bing-Yue

Журнал:

Journal of The Electrochemical Society

Рік:

2005

Мова:

english

Файл:

PDF, 233 KB

english, 2005

[IEEE 2015 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2015.4.27-2015.4.29)] 2015 International Symposium on VLSI Technology, Systems and Applications - Thin effective oxide thickness (∼0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer

Yang, Yi-Gin, Tsui, Bing-Yue

Рік:

2015

Мова:

english

Файл:

PDF, 202 KB

english, 2015

[IEEE 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Hsinchu (2015.6.29-2015.7.2)] 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits - A comparison study on the Al-based interfacial layers for Ge MIS devices

Yi-Gin Yang,, Bing-Yue Tsui,

Рік:

2015

Файл:

PDF, 1.36 MB

2015

Impact of ${\hbox{V}}_{\rm pass} $ Interference on Charge-Trapping NAND Flash Memory Devices

Hsiao, Yi-Hsuan, Lue, Hang-Ting, Chen, Wei-Chen, Chang, Kuo-Pin, Tsui, Bing-Yue, Hsieh, Kuang-Yeu, Lu, Chih-Yuan

Журнал:

IEEE Transactions on Device and Materials Reliability

Рік:

2015

Мова:

english

Файл:

PDF, 1.26 MB

english, 2015

[IEEE 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2016.7.18-2016.7.21)] 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Effect of formation temperature on quality of gate dielectric on germanium substrate

Wei, Erh-Jye, Tsui, Bing-Yue, Wu, Pin-Jiun

Рік:

2016

Файл:

PDF, 488 KB

2016

[IEEE 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2019.4.22-2019.4.25)] 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Thermal Stability of Shallow Ge N + -P Junction with Thin GeSn Top Layer

Liao, Hsiu-Hsien, Chen, Yi-Ju, Tsui, Bing-Yue

Рік:

2019

Файл:

PDF, 780 KB

2019

Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes

Hsieh, Chin-An, Tsai, Chia-Ming, Tsui, Bing-Yue, Hsiao, Bo-Jen, Lin, Sheng-Di

Журнал:

Sensors

Рік:

2020

Файл:

PDF, 3.70 MB

2020

Dielectric degradation of Pt/SiO2/Si structures during thermal annealing

Bing-Yue Tsui, Mao-Chieh Chen

Журнал:

Bing-Yue Tsui, Jiunn-Yan Tsai, Tzong-Shien Wu, Mao-Chien Chen

Рік:

1993

Мова:

english

Файл:

PDF, 2.17 MB

english, 1993

Effect of fluorine incorporation on the thermal stability of PtSi/Si structure

Журнал:

Bing-Yue Tsui, Kuo-Lung Fang, Shyh-Dar Lee

Рік:

1993

Мова:

english

Файл:

PDF, 1.10 MB

english, 1993

Electrical instability of low-dielectric constant diffusion barrier film (a-SiC:H) for copper interconnect

Журнал:

Bing-Yue Tsui, Chen-Chi Yang, Kuo-Lung Fang

Рік:

2001

Мова:

english

Файл:

PDF, 153 KB

english, 2001

Anisotropic thermal conductivity of nanoporous silica film

Журнал:

Bing-Yue Tsui, Li-Feng Chin

Рік:

2004

Мова:

english

Файл:

PDF, 296 KB

english, 2004

A comprehensive study on the FIBL of nanoscale MOSFETs

Журнал:

Chia-Pin Lin, Yi-Hsuan Hsiao, Bing-Yue Tsui

Рік:

2004

Мова:

english

Файл:

PDF, 250 KB

english, 2004

Process and Characteristics of Fully Silicided Source/Drain (FSD) Thin-Film Transistors

Журнал:

Рік:

2006

Мова:

english

Файл:

PDF, 859 KB

english, 2006

Transient Charging and Discharging Behaviors of Border Traps in the Dual-Layer HfO2/SiO2 High- κ Gate Stack Observed by Using Low-Frequency Charge Pumping Method

Wei-Hao Wu, Bing-Yue Tsui, Mao-Chieh Chen, Yong-Tian Hou, Yin Jin, Tao, H.-J., Shih-Chang Chen, Mong-Song Liang

Журнал:

Bing-Yue Tsui, Chia-Pin Lin

Рік:

2007

Мова:

english

Файл:

PDF, 415 KB

english, 2007

A novel 25-nm modified Schottky-barrier FinFET with high performance

Журнал:

Chiu, Wei-Chih, Tsui, Bing-Yue

Рік:

2004

Мова:

english

Файл:

PDF, 225 KB

english, 2004

[IEEE 2013 IEEE International Nanoelectronics Conference (INEC) - Singapore, Singapore (2013.01.2-2013.01.4)] 2013 IEEE 5th International Nanoelectronics Conference (INEC) - Investigation into the performance of CNT-interconnects by spin coating technique

Рік:

2013

Мова:

english

Файл:

PDF, 395 KB

english, 2013

[IEEE 2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers - Hsinchu, Taiwan (6-8 Oct. 2003)] 2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672) - Anisotropic thermal conductivity of nano-porous silica film

Bing-Yue Tsui,, Chen-Chi Yang,, Kuo-Lung Fang,

Рік:

2003

Мова:

english

Файл:

PDF, 257 KB

english, 2003

High-Performance Poly-Si Nanowire Thin-Film Transistors Using the $\hbox{HfO}_{2}$ Gate Dielectric

Lee, Chen-Ming, Tsui, Bing-Yue

Журнал:

Chen-Ming Lee,, Bing-Yue Tsui,

Рік:

2011

Мова:

english

Файл:

PDF, 476 KB

english, 2011

[IEEE 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2013.4.22-2013.4.24)] 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Random telegraph signal noise arising from grain boundary traps in nano-scale poly-Si nanowire thin-film transistors

Рік:

2013

Мова:

english

Файл:

PDF, 693 KB

english, 2013

Hot-carrier effects in P-channel modified Schottky-barrier FinFETs

Chia-Pin Lin,, Bing-Yue Tsui

Журнал:

Wang, Pei-Yu, Tsui, Bing-Yue

Рік:

2005

Мова:

english

Файл:

PDF, 743 KB

english, 2005

${\rm Si}_{\rm x}{\rm Ge}_{1\hbox{-}{\rm x}}$ Epitaxial Tunnel Layer Structure for P-Channel Tunnel FET Improvement

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 1.19 MB

english, 2013

Modeling the Impact of Random Grain Boundary Traps on the Electrical Behavior of Vertical Gate 3-D NAND Flash Memory Devices

Hsiao, Yi-Hsuan, Lue, Hang-Ting, Chen, Wei-Chen, Chang, Kuo-Pin, Shih, Yen-Hao, Tsui, Bing-Yue, Hsieh, Kuang-Yeu, Lu, Chih-Yuan

Журнал:

Рік:

2014

Мова:

english

Файл:

PDF, 2.66 MB

english, 2014

Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation

Chen, Che-Wei, Tzeng, Ju-Yuan, Chung, Cheng-Ting, Chien, Hung-Pin, Chien, Chao-Hsin, Luo, Guang-Li, Wang, Pei-Yu, Tsui, Bing-Yue

Журнал:

Tsui, Bing-Yue, Cheng, Jung-Chien, Lee, Lurng-Shehng, Lee, Chwan-Ying, Tsai, Ming-Jinn

Рік:

2014

Мова:

english

Файл:

PDF, 401 KB

english, 2014

Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO 2 insertion method

Журнал:

Japanese Journal of Applied Physics

Рік:

2014

Мова:

english

Файл:

PDF, 1017 KB

english, 2014

High-performance poly-silicon TFTs using HfO/sub 2/ gate dielectric

Chia-pin Lin, Bing-yue Tsui, Ming-jui Yang, Ruei-hao Huang, Chao-hsin Chien

Журнал: